Professor Maija Kukla

THE DEPARTMENT of  MATERIALS SCIENCE and ENGINEERING · A. JAMES CLARK SCHOOL of  ENGINEERING

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About Dr. Onise Sharia

E-mail: osharia@umd.edu

Education

• Ph.D. August 2008, The University of Texas at Austin, Physics.
  • Superviser: Alex Demkov
  • Thesis: "Theoretical investigation of transition metal oxides as high-k materials in CMOS technology"
• B.S. May 2001, Tbilisi State University, Physics.

Professional Experience:

• Research Associate, Department of Materials Science and Engineering, University of Maryland, College Park, October 2008-present.
• Research Assistant, Department of Physics, the University of Texas at Austin, June 2005-September 2008.
• Teaching Assistant, Department of Physics, the University of Texas at Austin, September 2002-May 2005.

Research Interests/Overview:

My research interest is in solid state physics and computational materials science. Using first principles methods I have studied vacancies, surfaces, interfaces and various other defects in many technologically important materials. Currently I study chemical reactions in the presence of such defects in organic crystals.

Grants:

• O. Sharia, "Effects of voids and shear strain on initiation chemistry in organic crystals", TeraGrid Research Allocation Grant No. DMR100054 (2010) - 550 000SUs.
• O. Sharia, "Effects of voids, surfaces, and shear-strain on initiation of rapid decomposition of molecular materials", TeraGrid Developmental Allocation Grant No. DMR090142 (2009) - 140 000SUs.

Publications:

Journal articles:

11. O. Sharia, M. M. Kuklja, "Ab initio kinetics of gas phase Decomposition Reactions", J. Phys. Chem. A, 114, 12656 (2010).
10. G. Bersuker, C. S. Park, H.-C. Wen, K. Choi, J. Price, P. Lysaght, H.-H. Tseng, O. Sharia, A. Demkov, J. T. Ryan, and P. Lenahan, "Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks", IEEE Transactions on Electron Devices, 57, 2047 (2010).
9. R. Ehlert, J. Kwon, L. Loumakos, O. Sharia, A. A. Demkov, and M. C. Downer "Optical second-harmonic and reflectance-anisotropy spectroscopy of clean and hydrogen-terminated vicinal Si(001) surfaces", J. Opt. Soc. Am. B, 27, 981 (2010).
8. A. A. Demkov, X. Luo, and O. Sharia, "Theory of HfO₂-based high-k dielectric gate stacks", book chapter in "III-V Compound Semiconductor Mosfets", editors: S. Oktyabrsky and P. Ye, Springer, chapter 4, pp. 51-91 (2010).
7. A. A. Demkov, O. Sharia, X. Luo, G. Bersuker, and J. Robertson, "Modeling complexity of a complex gate oxide" Microelectronic Engineering 86, 1763 (2009).
6. O. Sharia, K. Tse, J. Robertson, and A. A. Demkov, "Extended Frenkel pairs and band alignment at metal-oxide interfaces" Phys. Rev. B 79, 125305 (2009).
5. O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, "Effects of aluminum incorporation on band alignment at the SiO₂/HfO₂ interface" Phys. Rev. B 77, 085326 (2008).
4. J. Robertson, O. Sharia, and A.A. Demkov, "Fermi level pinning by defects in HfO₂-metal gate stacks" Appl. Phys. Lett. 91, 132912 (2007).
3. A. A. Demkov, O. Sharia, J. K. Lee, "Theoretical analysis of high-k dielectric gate stacks" Microelectronics Engineering 84, 2032 (2007).
2. A. A. Demkov, O. Sharia, X. Luo and J. K. Lee, "Density functional theory of high-k dielectric gate stacks" Microelectronics Reliability 45, 686 (2007).
1. O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, "Theoretical study of the insulator/insulator interface: Band alignment at the SiO₂/HfO₂ junction" Phys. Rev. B 75, 035306 (2007).

Conference Proceedings:

3. O. Sharia, M. M. Kuklja, "Effects of defects on initiation of chemistry in HMX", Proceedings of the American Physical Society Topical Group on Shock Compression of Condensed Matter, 1195, 353 (2009).
2. X. Luo, A. A. Demkov, O. Sharia, G. Bersuker, "Hafnia surface and high-k gate stacks", Mater. Res. Soc. Symp. Proc. 1155, (2009).
1. G. Bersuker, C.S. Park, H.C. Wen, K. Choi, O Sharia, O., A Demkov, "Origin of the flat-band voltage (V_fb) roll-off phenomenon in metal/high-k gate stacks" 38th European Solid-State Device Research Conference. ESSDERC, 134 (2008).

Presentations:

7. O. Sharia, M. M. Kuklja, "Effects of shear strain on initiation of chemical reactions in HMX" APS SCCM meeting, Nashville, TN, July 2009.
6. O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, "Role of Al incorporation at the SiO₂/HfO₂ interface" 4Materials Research Society meeting, San Francisco CA, April 2008.
5. O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, "Role of Al incorporation at the SiO₂/HfO₂ interface" American Physical Society meeting, New Orleans, LA, March 2008.
4. O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, "On the role of aluminum incorporation at the SiO₂/HfO₂ interface" 4th International Symposium on Advance Gate Stack Technology, Dallas, TX, September 2007.
3. O. Sharia, A. A. Demkov, G. Bersuker, H. L. Lee, "Theoretical study of the insulator/insulator interface: band alignment at the SiO₂/HfO₂ junction" American Physical Society meeting, Denver, CO, March 2007.
2. O. Sharia, A. A. Demkov, G. Bersuker, H. L. Lee, "Internal dielectric interface: SiO₂-HfO₂" Materials Research Society meeting, San Francisco CA, April 2007.
1. O. Sharia, A. A. Demkov, G. Bersuker, H. L. Lee, "Theoretical study of the insulator/insulator interface" 3rd International Symposium on Advance Gate Stack Technology, Austin, TX, September 2006.

 

 

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Department of Materials Science | A. James Clark School of Engineering | University of Maryland